Characterization of quantum interference control of injected currents in LT-GaAs for carrier-envelope phase measurements.
نویسندگان
چکیده
We use two mutually coherent, harmonically related pulse trains to experimentally characterize quantum interference control (QIC) of injected currents in low-temperature-grown gallium arsenide. We observe real-time QIC interference fringes, optimize the QIC signal fidelity, uncover critical signal dependences regarding beam spatial position on the sample, measure signal dependences on the fundamental and second harmonic average optical powers, and demonstrate signal characteristics that depend on the focused beam spot sizes. Following directly from our motivation for this study, we propose an initial experiment to measure and ultimately control the carrier-envelope phase evolution of a single octave-spanning pulse train using the QIC phenomenon.
منابع مشابه
Quantum Interference Control of Electrical Currents in GaAs - Quantum Electronics, IEEE Journal of
In an earlier publication, preliminary observations of the generation of electrical currents were reported in GaAs and low-temperature-grown GaAs (LT-GaAs) at 295 K using quantum interference control of singleand two-photon band–band absorption of 1.55and 0.775m ultrashort optical pulses. Timeintegrated currents were measured via charge collection in a metal–semiconductor–metal (MSM) electrode ...
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عنوان ژورنال:
- Optics express
دوره 11 17 شماره
صفحات -
تاریخ انتشار 2003